Title :
Optimization of high Q CMOS-compatible microwave inductors using silicon CMOS technology
Author :
Min Park ; Seonghearn Lee ; Hyun Kyu Yu ; Kee Soo Nam
Author_Institution :
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We present the extensive experimental results showing the important dependences of layout parameters on RF performance of rectangular spiral inductors, in order to determine the optimized layout parameters for designing the high Q inductors used in RF ICs at 2 GHz. The detailed comparative analysis is also carried out to investigate substrate effects by varying the substrate resistivity.
Keywords :
CMOS integrated circuits; Q-factor; circuit layout CAD; elemental semiconductors; field effect MMIC; inductors; silicon; 2 GHz; CMOS technology; CMOS-compatible microwave inductors; RF performance; Si; high Q inductors; optimized layout parameters; rectangular spiral inductors; substrate effects; substrate resistivity; CMOS technology; Conductivity; Consumer electronics; Design optimization; Inductors; Microwave technology; Radio frequency; Silicon; Spirals; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598777
