Measurement of ion induced secondary electron emission coefficient(γ)and work function of vacuum annealed MgO protective layer in AC PDP

MgO films as the protective layer in AC-PDPs has been annealed here under vacuum environment in order to eliminate absorbed material onto the MgO layer. Vacuum annealed can be one of the most important processes for forming long-lived panel. It is of great important to investigate the influence of vacuum annealed on the ion-induced secondary electron emission coefficient(γ) from a MgO protective layer. In this research, γ and work-function of the vacuum annealed MgO films has been investigated by γ-FIB(focused ion beam) system. Also the characteristics of γ and work-function for as-deposited and vacuum annealed MgO films have been investigated and compared with each other throughout this research. The MgO protective layer is deposited on the dielectric layer by electron beam evaporation at deposition rates of approximately 5∼10 Å/s in a vacuum of about 1.1×10^-6 Torr. The thickness of MgO layer is about 5000 Å. The deposited MgO films have been vacuum annealed at 300°C for 15 minutes. Also some of the as-deposited MgO films and Vacuum annealed MgO films have been air-hold by 24-hours in this experiment. The γ and work-function characteristics for these two MgO films have been measured by γ-FIB system and compared with each other throughout this experiment.