Title :
A Wideband 20 mW UHF Rectifier in CMOS
Author :
Chao-Han Tsai ; I-No Liao ; Pakasiri, Chatrpol ; Hsin-Cheng Pan ; Yu-Jiu Wang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This letter presents the first CMOSFET RF-to-DC Rectifier IC which delivers more than 10 mW dc power at GHz frequency. This IC utilizes the single-ended In-phase Gate-boosting Rectifier (IGR) architecture, and its In-Phase Voltage Multiplier (IPVM) is derived from a λ/2 transmission line to boost in-phase VGS from the driving VDS. This simultaneously reduces the effective threshold voltage, forward resistance, and reverse leakage current of the rectifying transistors. To improve an IGR´s performance, both RF source-pull and dc load-pull are carried out to find the optimal performance. The UHF IGR is implemented using thick-gate-oxide I/O transistors with 0.28 μm minimum gate length in TSMC 65 nm CMOS process. The implemented IC achieves a 20 mW output dc power with 31.8% peak efficiency at 900 MHz with 200 MHz 1 dB bandwidth.
Keywords :
CMOS integrated circuits; MOSFET; UHF integrated circuits; leakage currents; rectifiers; voltage multipliers; λ-2 transmission line; CMOSFET RF-to-DC Rectifier IC; DC load-pull; IGR architecture; IPVM; RF source-pull; TSMC CMOS process; bandwidth 200 MHz; effective threshold voltage; efficiency 31.8 percent; forward resistance; frequency 900 MHz; gain 1 dB; in-phase voltage multiplier; power 20 mW; rectifying transistor; reverse leakage current; single-ended in-phase gate-boosting rectifier architecture; size 0.28 mum; size 65 nm; thick-gate-oxide I-O transistor; wideband UHF rectifier; CMOS integrated circuits; Impedance matching; Logic gates; Power generation; Radio frequency; Transistors; Energy harvesting; rectifying circuits; wireless power transfer;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2421357
