• DocumentCode
    28075
  • Title

    A Wideband 20 mW UHF Rectifier in CMOS

  • Author

    Chao-Han Tsai ; I-No Liao ; Pakasiri, Chatrpol ; Hsin-Cheng Pan ; Yu-Jiu Wang

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    25
  • Issue
    6
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    388
  • Lastpage
    390
  • Abstract
    This letter presents the first CMOSFET RF-to-DC Rectifier IC which delivers more than 10 mW dc power at GHz frequency. This IC utilizes the single-ended In-phase Gate-boosting Rectifier (IGR) architecture, and its In-Phase Voltage Multiplier (IPVM) is derived from a λ/2 transmission line to boost in-phase VGS from the driving VDS. This simultaneously reduces the effective threshold voltage, forward resistance, and reverse leakage current of the rectifying transistors. To improve an IGR´s performance, both RF source-pull and dc load-pull are carried out to find the optimal performance. The UHF IGR is implemented using thick-gate-oxide I/O transistors with 0.28 μm minimum gate length in TSMC 65 nm CMOS process. The implemented IC achieves a 20 mW output dc power with 31.8% peak efficiency at 900 MHz with 200 MHz 1 dB bandwidth.
  • Keywords
    CMOS integrated circuits; MOSFET; UHF integrated circuits; leakage currents; rectifiers; voltage multipliers; λ-2 transmission line; CMOSFET RF-to-DC Rectifier IC; DC load-pull; IGR architecture; IPVM; RF source-pull; TSMC CMOS process; bandwidth 200 MHz; effective threshold voltage; efficiency 31.8 percent; forward resistance; frequency 900 MHz; gain 1 dB; in-phase voltage multiplier; power 20 mW; rectifying transistor; reverse leakage current; single-ended in-phase gate-boosting rectifier architecture; size 0.28 mum; size 65 nm; thick-gate-oxide I-O transistor; wideband UHF rectifier; CMOS integrated circuits; Impedance matching; Logic gates; Power generation; Radio frequency; Transistors; Energy harvesting; rectifying circuits; wireless power transfer;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2015.2421357
  • Filename
    7086096