Title :
Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth
Author :
Kajita, Mikihiro ; Kawakami, Takeshi ; Yoshikawa, Takashi ; Uemura, Atsuko ; Sugimoto, Yoshimasa ; Kasahara, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A InGaAs QW vertical cavity surface-emitting laser with a broad-gain bandwidth was fabricated by using multiple-quantum-well active layers with different bandgap energies, increasing the temperature range by more than 20°C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 20 C; InGaAs; InGaAs QW vertical cavity surface-emitting laser; bandgap energies; broad gain bandwidth; improved temperature characteristics; multiple-quantum-well active layers; temperature range; vertical cavity surface-emitting laser; Artificial intelligence; Bandwidth; Carrier confinement; Indium gallium arsenide; Quantum well devices; Resonance; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519323
