DocumentCode
2808457
Title
Systematic investigations on MESFETs and passive components transplanted by epitaxial lift off onto host materials with various resistivities
Author
Morf, T. ; Biber, C. ; Bachtold, W.
Author_Institution
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1997
fDate
10-10 June 1997
Firstpage
197
Lastpage
200
Abstract
In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently reattached to a new host substrate.
Keywords
S-parameters; Schottky gate field effect transistors; characteristics measurement; inductors; microwave field effect transistors; semiconductor epitaxial layers; semiconductor technology; GaAs; InP; MESFETs; RF measurements; Si; SiO/sub 2/; epitaxial lift off; host substrate; passive components; spiral inductors; Conductivity; Etching; Gallium arsenide; Indium phosphide; Laboratories; MESFETs; Radio frequency; Scanning electron microscopy; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location
Denver, CO, USA
Print_ISBN
0-7803-4063-9
Type
conf
DOI
10.1109/RFIC.1997.598783
Filename
598783
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