DocumentCode :
2808697
Title :
Electron collision cross-sections in mono-silane (SiH4) molecule: an investigation and analysis
Author :
Haq, Saeed Ul
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear :
2005
fDate :
16-19 Oct. 2005
Firstpage :
39
Lastpage :
42
Abstract :
Investigation and analysis of data for collision of electron with SiH4 molecule has been carried out by reviewing the published data during the last two decades. Momentum transfer, vibrational-excitation, excitation, dissociation, dissociation-attachment, and ionization cross-sections are used to calculate and analyze the transport coefficients. The measured parameters reported in this work are drift velocity (W) and characteristic energy (D/μ). Calculation of transport coefficients is carried out by using the two-term numerical solution of Boltzmann equation (Bolsig).
Keywords :
Boltzmann equation; electron impact dissociation; electron impact excitation; electron impact ionisation; numerical analysis; rotational-vibrational energy transfer; silicon compounds; Boltzmann equation; SiH4; dissociation cross-section; dissociation-attachment cross-section; drift velocity; electron collision cross-sections; excitation cross-section; ionization cross-sections; momentum transfer; monosilane molecule; transport coefficients; two-term numerical solution; vibrational-excitation cross-section; Amorphous materials; Electron beams; Electron mobility; Energy measurement; Ionization; Plasma applications; Plasma materials processing; Plasma measurements; Plasma properties; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 2005. CEIDP '05. 2005 Annual Report Conference on
Print_ISBN :
0-7803-9257-4
Type :
conf
DOI :
10.1109/CEIDP.2005.1560615
Filename :
1560615
Link To Document :
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