Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG

Author

Sadeghi, Mohammadreza ; Sexton, James ; Chen-Wei Liang ; Missous, Mohamed

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK

Volume

15

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

1817

Lastpage

1824

Abstract

This paper reports on the first low power (10.4 mW) and ultrasensitive linear Hall-effect integrated circuits (LHEICs) using GaAs-InGaAs-AlGaAs 2D electron gas technology. These LHEICs have a state-of-the-art sensitivity of 533 μV/μT and are capable of detecting magnetic fields as low as 177 nT (in a 10-Hz bandwidth), at frequencies from 500 Hz to 200 kHz. This provides at least an order of magnitude improvement in sensitivity and a factor of four improvements in detectability of small fields, compared with commercial Si linear Hall ICs.

Keywords

Hall effect transducers; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; magnetic field measurement; magnetic sensors; semiconductor quantum wells; two-dimensional electron gas; 2D electron gas technology; 2DEG; GaAs-InGaAs-AlGaAs; frequency 500 Hz to 200 kHz; low power integrated circuit; magnetic field detection; nanotesla quantum-well hall-effect integrated circuit; power 10.4 mW; ultrasensitive linear Hall-effect integrated circuits; Hall effect; Integrated circuit modeling; Logic gates; PHEMTs; Sensitivity; Sensors; 2DEG; GaAs-InGaAs-AlGaAs; LHEIC; Linear Hall Effect Integrated Circuit; Linear Hall effect integrated circuit; pHEMT;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2014.2368074

Filename

6948248