• DocumentCode
    2808738
  • Title

    A New Via Hole Structure for Power GaAs MESFET´s and MMIC

  • Author

    Songfa, Li ; Qingxiang, Liu

  • Volume
    83
  • Issue
    1
  • fYear
    1983
  • fDate
    31 May-1 Jun 1983
  • Firstpage
    36
  • Lastpage
    36
  • Abstract
    A New Via Hole Structure made by the laser beam technique has been developed. A 1.2mm gate width GaAs power MESFETand an experimental MMIC were fabricated with this method, thus the availability of this new via hole structure has been verified.
  • Keywords
    Chemical processes; Etching; Gallium arsenide; Inductance; Laser beams; MESFETs; MMICs; Performance evaluation; Semiconductor lasers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1983.1151037
  • Filename
    1151037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2808738