Title :
A New Via Hole Structure for Power GaAs MESFET´s and MMIC
Author :
Songfa, Li ; Qingxiang, Liu
fDate :
31 May-1 Jun 1983
Abstract :
A New Via Hole Structure made by the laser beam technique has been developed. A 1.2mm gate width GaAs power MESFETand an experimental MMIC were fabricated with this method, thus the availability of this new via hole structure has been verified.
Keywords :
Chemical processes; Etching; Gallium arsenide; Inductance; Laser beams; MESFETs; MMICs; Performance evaluation; Semiconductor lasers; Substrates;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1983.1151037
