DocumentCode
2808823
Title
Improvement of interfacial performance on silicone insulating and semiconducting interface by plasma-treatment
Author
Youn, Bokhee ; Kim, Dongwook ; Jeon, Seungik
Author_Institution
Electr. Power R&D Center, Gumi, South Korea
fYear
2005
fDate
16-19 Oct. 2005
Firstpage
75
Lastpage
78
Abstract
In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints made with silicone materials. Surface characterizations were assessed using contact angle measurement and XPS, and then adhesion level and electrical performance were evaluated from T-peel test and breakdown voltage between treated semi-conductive and insulating layer. From the results, the oxygen plasma treatment produces a significant decrease in surface energy, which can be mainly ascribed to the creation of oxidized groups on the silicone surface based on results using XPS. This facilitates to adhesion with only short term plasma treatment (∼ about 1 min.). Therefore, it is concluded that plasma treatment improve the adhesion in silicone interface and then decrease possibilities of voids formation.
Keywords
X-ray photoelectron spectra; contact angle; electric breakdown; organic semiconductors; plasma materials processing; semiconductor-insulator boundaries; silicone rubber; surface energy; surface treatment; T-peel test; XPS; adhesion level; breakdown voltage; contact angle measurement; electrical performance; insulating layer; interfacial performance; oxidized group; oxygen plasma-treatment; semiconducting silicone insulating interface; semiconductive layer; silicone joints; surface characterization; void formation; Adhesives; Contacts; Electric variables measurement; Insulation; Joining materials; Plasma materials processing; Plasma measurements; Semiconductivity; Semiconductor materials; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 2005. CEIDP '05. 2005 Annual Report Conference on
Print_ISBN
0-7803-9257-4
Type
conf
DOI
10.1109/CEIDP.2005.1560624
Filename
1560624
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