Title :
Surface emitting 1.3 μm SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens
Author :
Stegmüller, B. ; Westermeier, H. ; Hedrich, H.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
1.3 μm strained-layer (SL) quantum well (QW) InGaAsP-InP ridge-waveguide (RWG) DFB laser diodes with a monolithic integrated microlens have been fabricated. At 25°C 27 mA CW-threshold current and 10 mW CW-emission perpendicular to the InP substrate are achieved using a 45° internal deflector
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser accessories; lenses; optical deflectors; quantum well lasers; ridge waveguides; surface emitting lasers; waveguide lasers; 1.3 mum; 10 mW; 25 C; 27 mA; CW-emission; CW-threshold current; DFB laser diodes; InGaAsP-InP; InGaAsP/InP ridge-waveguide laser diodes; InP; InP substrate; QW laser diodes; internal deflector; monolithic integrated microlens; quantum well lasers; strained-layer; surface emitting lasers; Diodes; Indium phosphide; Laser beams; Lenses; Microoptics; Mirrors; Optical imaging; Reflectivity; Surface emitting lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519330
