Title :
A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition
Author :
Cockerill, T.M. ; Osowski, M.L. ; Lammert, R.M. ; Coleman, J.J.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression ⩾24 dB
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; laser modes; optical couplers; optical fabrication; ring lasers; semiconductor growth; semiconductor lasers; waveguide lasers; 300 C; InGaAs-GaAs; InGaAs-GaAs buried heterostructure circular ring laser; cw single mode; integrated Y-coupled passive waveguide; selective-area growth; selective-area metalorganic chemical vapor deposition; side mode suppression; strained-layer; Etching; Laser modes; Optical losses; Optical surface waves; Optical waveguides; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519331
