DocumentCode :
2809803
Title :
First-principle calculation of Ge-doped anatase TiO2
Author :
Chen, Hua ; Zhang, Xuefeng
Author_Institution :
Sch. of Math., Phys. & Biol. Eng., Inner Mongolia Univ. of Sci. & Technol., Baotou, China
fYear :
2011
fDate :
15-17 July 2011
Firstpage :
4084
Lastpage :
4087
Abstract :
Band structure of the Ge-doped anatase TiO2 has been analyzed using the full potential-linearized augmented plane wave method (FP-LAPW). We investigated the band structure of the Ge-doped anatase TiO2 using generalized gradient approximation (GGA) and local density approximation (LDA). Compared our calculated optimized structure of the Ge doped with the pure anatase TiO2, it can be concluded that the volume of the Ge-doped anatase become reduced. The calculated band structure prefers an indirect transition between valence and conduction band of the Ge-doped anatase TiO2. The calculated results are in good agreement with the other calculated results.
Keywords :
APW calculations; conduction bands; density functional theory; germanium; gradient methods; semiconductor materials; titanium compounds; valence bands; TiO2:Ge; band structure; conduction band; first principle calculation; full potential-linearized augmented plane wave method; generalized gradient approximation; germanium doped anatase titanium dioxide; local density approximation; valence band; Approximation methods; Crystals; Lead; Physics; Three dimensional displays; Ge-doped; TiO2; ab initio; band structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location :
Hohhot
Print_ISBN :
978-1-4244-9436-1
Type :
conf
DOI :
10.1109/MACE.2011.5987900
Filename :
5987900
Link To Document :
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