Title :
MESFET oscillator design based on feedback mapping classification
Author_Institution :
Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong
Abstract :
Limits of active device S-parameters obtainable using feedback are predicted by classification of feedback mappings. Reverse mapping is used to determine optimum feedback terminations. The prediction of maximum S-parameters and optimal terminations based solely on the measured two-port parameters of the active device is described. The advantage of using the technique is illustrated by an oscillator design example
Keywords :
S-parameters; Schottky gate field effect transistors; feedback; lumped parameter networks; microwave oscillators; solid-state microwave circuits; MESFET oscillator design; device S-parameters; feedback mapping classification; maximum S-parameter prediction; measured two-port parameters; optimum feedback terminations; oscillator design example; reverse mapping; Circuits; Cities and towns; Electrical resistance measurement; Equations; MESFETs; Microwave frequencies; Microwave oscillators; Negative feedback; Reflection; Scattering parameters;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140792
