Title :
Comparative study of two input DR loaded GaAs FET oscillators
Author :
Yip, P.C.L ; Lam, M.T.
Author_Institution :
Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong
Abstract :
Two GaAs FET oscillators at 10.8 GHz are designed with identical requirements on the source and load reflection coefficients. Both designs employ a dielectric resonator (DR) coupled microstrip line as the resonating element connected to the source port, one with a terminating resistance and the other open circuited. The performance of both designs are compared with respect to their short-term stability
Keywords :
III-V semiconductors; dielectric resonators; frequency stability; gallium arsenide; microwave oscillators; solid-state microwave circuits; 10.8 GHz; DRO; GaAs; GaAs FET oscillators; Ko-band; dielectric resonator coupled microstrip line; dielectric resonator loaded FET oscillators; load reflection coefficients; open circuit microstrip; open circuited; semiconductors; short-term stability; source reflection coefficients; stability performance; terminated microstrip; terminating resistance; Coupling circuits; Dielectrics; FETs; Feedback; Frequency; Gallium arsenide; Microstrip resonators; Oscillators; Reflection; Satellite broadcasting;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140793
