Title :
Nonquasi-static modeling technique for microwave GaAs FETs
Author :
Lin, H.-K. ; Abdel-motaleb, Ibrahim M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
A technique to develop nonquasi-static models for GaAs FETs is developed. In this technique, the active distributed transmission line analogy is used to obtain frequency dependent Y-parameter relationships. Implementing the Y-parameters using R, L and C elements, a small signal equivalent circuits can be built
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; junction gate field effect transistors; semiconductor device models; solid-state microwave devices; FETs; GaAs; JFET; MESFET; active distributed transmission line analogy; frequency dependent Y-parameter relationships; nonquasi-static models; semiconductors; small signal equivalent circuits; Delay effects; Equivalent circuits; Gallium arsenide; JFETs; MESFETs; Microwave FETs; Microwave theory and techniques; Semiconductor device modeling; Thyristors; Voltage;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140795
