• DocumentCode
    2810033
  • Title

    New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics

  • Author

    Phillips, A.F. ; Meney, A.T. ; Prins, A.D. ; Sly, J.L. ; O´Reilly, E.P. ; Dunstan, D.J. ; Adams, A.R. ; Valster, A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    Using hydrostatic pressure, new energies for the X-minima, L-minima and band offsets in (AlxGa1-x)0.5 In0.5P were obtained and correlated with temperature and pressure measurements on visible lasers using diffusion models
  • Keywords
    III-V semiconductors; aluminium compounds; band structure; energy gap; gallium compounds; hydrostatics; indium compounds; optical correlation; pressure measurement; quantum well lasers; (AlxGa1-x)0.5In0.5P; AlGaInP; L-minima; X-minima; band offsets; band structure; diffusion models; disordered AlGaIn; hydrostatic pressure; pressure measurements; temperature measurements; visible laser characteristics; visible lasers; Laser modes; Laser theory; Photonic band gap; Physics; Potential well; Pressure measurement; Semiconductor lasers; Temperature measurement; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519334
  • Filename
    519334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2810033