Title :
Uniform hole injection resulting in low operating current and stable high temperature cw operation in 630 nm band AlGaInP multi-quantum well laser
Author :
Hotta, Hitashi ; Miyasaka, Fumito ; Tada, Kentaro ; Kobayashi, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Summary form only given. The influence of hole injection was investigated for AlGaInP MQW lasers. By improving the uniformity of the hole injection, low operating currents were obtained for 630 nm band AlGaInP MQW lasers, with stable operation at 60°C, for the first time
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser stability; quantum well lasers; 60 C; 630 nm; AlGaInP; AlGaInP multi-quantum well laser; low operating current; stable high temperature cw operation; stable operation; uniform hole injection; Abstracts; Laser stability; Laser theory; Laser transitions; Physics; Quantum well devices; Semiconductor lasers; Springs; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519335
