DocumentCode
2810210
Title
Uniform hole injection resulting in low operating current and stable high temperature cw operation in 630 nm band AlGaInP multi-quantum well laser
Author
Hotta, Hitashi ; Miyasaka, Fumito ; Tada, Kentaro ; Kobayashi, Kenichi
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
203
Lastpage
204
Abstract
Summary form only given. The influence of hole injection was investigated for AlGaInP MQW lasers. By improving the uniformity of the hole injection, low operating currents were obtained for 630 nm band AlGaInP MQW lasers, with stable operation at 60°C, for the first time
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser stability; quantum well lasers; 60 C; 630 nm; AlGaInP; AlGaInP multi-quantum well laser; low operating current; stable high temperature cw operation; stable operation; uniform hole injection; Abstracts; Laser stability; Laser theory; Laser transitions; Physics; Quantum well devices; Semiconductor lasers; Springs; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519335
Filename
519335
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