Title :
Transient radiation effects in CMOS/SOI transistors and circuits
Author :
Ferlet-Cavrois, V. ; Dupont-Nivet, E. ; Vildeuil, J.C. ; Musseau, O. ; Leray, J.L.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation
Keywords :
CMOS integrated circuits; MOSFET; SPICE; radiation hardening (electronics); silicon-on-insulator; 2D drift-diffusion code; CMOS/SOI technology; SPICE simulation; circuit; dose rate hardening; photocurrent model; transient radiation effects; transistor; CMOS technology; Circuit simulation; Isolation technology; MOS devices; MOSFETs; Predictive models; Radiation effects; Radiation hardening; Semiconductor device modeling; Silicon on insulator technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698938
