Title :
Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes
Author :
Hiroyama, R. ; Bessho, Y. ; Kase, H. ; Ikegami, T. ; Honda, S. ; Shono, M. ; Yodoshi, K. ; Yamaguchi, T. ; Niina, T.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
Summary form only given. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes were investigated for the first time. The lowest threshold current of 33 mA and the highest maximum operating temperature of 90°C were achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 33 mA; 630 nm; 630-nm-band AlGaInP laser diodes; 90 C; AlGaInP; maximum operating temperature; strain-compensated multiple quantum well AlGaInP laser diodes; threshold current; Capacitive sensors; Diode lasers; Electrons; Epitaxial growth; Microelectronics; Power generation; Quantum well devices; Temperature; Tensile strain; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519336
