Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguide lasers suitable for monolithic integration

Author

Ralston, J.D. ; Eisele, K. ; Sah, R.E. ; Larkins, E.C. ; Weisser, S. ; Rosenzweig, J. ; Fleissner, J. ; Bender, K.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1994

fDate

19-23 Sep 1994

Firstpage

211

Lastpage

212

Abstract

The successful application of direct laser modulation for very-high-speed digital transmission or microwave/millimeter-wave analog optical links requires a) reductions in the drive currents required to achieve high modulation bandwidths, b) increases in the maximum intrinsic modulation bandwidths, c) reductions in laser chirp under high-speed direct modulation, and d) high-speed laser structures which can be monolithically integrated with high-speed transistors. Utilizing a single epitaxial growth (HEMT+laser) and an air-bridged, coplanar electrode geometry, a complete technological process has also been developed in our labs for the monolithic integration of vertically-compact GaAs MQW ridge-waveguide (RWG) lasers with double pulse-doped GaAs/AlGaAs QW enhancement/ depletion HEMT electronics

Keywords

HEMT integrated circuits; III-V semiconductors; gallium arsenide; integrated optoelectronics; optical modulation; optical transmitters; quantum well lasers; waveguide lasers; 33 GHz; GaAs-InGaAs; GaAs-based pseudomorphic MQW ridge-waveguide lasers; HEMT; air-bridged coplanar electrode geometry; direct laser modulation; double pulse-doped GaAs/AlGaAs QW enhancement/depletion HEMT electronics; drive currents; high-speed laser structures; high-speed transistors; laser chirp; low-bias-current direct modulation; maximum intrinsic modulation bandwidths,; microwave analog optical links; millimeter-wave analog optical links; monolithic integration; single epitaxial growth; vertically-compact GaAs MQW ridge-waveguide lasers; very-high-speed digital transmission; Bandwidth; Chirp modulation; Digital modulation; Gallium arsenide; Laser applications; Masers; Microwave transistors; Millimeter wave technology; Millimeter wave transistors; Optical fiber communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519338

Filename

519338