RF Performance and Avalanche Breakdown Analysis of InN Tunnel FETs

Author

Ghosh, Koushik ; Singisetti, Uttam

Author_Institution

State Univ. of New York at Buffalo, Buffalo, NY, USA

Volume

61

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

3405

Lastpage

3410

Abstract

This paper reports radio frequency (RF) performance and channel breakdown analysis in an n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling. We investigate the RF performance of the device. High transconductance of 2.18 mS/μm and current gain cutoff frequency of 460 GHz makes the device suitable for terahertz applications. A significant reduction in gate-to-drain capacitance is observed under a relatively higher drain bias (V_ds = 1 V). Impact ionization coefficient in the channel is evaluated quantitatively considering semiclassical carrier transport and avalanche breakdown is found to be unlikely at V_ds = 1.0 V.

Keywords

III-V semiconductors; field effect transistors; impact ionisation; indium compounds; semiconductor device breakdown; submillimetre wave transistors; tunnelling; InN; avalanche breakdown analysis; channel breakdown analysis; frequency 460 GHz; gate-to-drain capacitance; impact ionization coefficient; n-type tunneling field-effect transistor; quantum mechanical tunneling; radiofrequency performance; semiclassical carrier transport; tunnel FET; voltage 1.0 V; Avalanche breakdown; Impact ionization; Logic gates; Photonic band gap; Radio frequency; Tunneling; Avalanche mechanism; InN; Wolff´s theory.; Wolff??s theory; gate-to-drain capacitance; high power terahertz application; ionization coefficient; tunnel field-effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2344914

Filename

6878469