DocumentCode
2811042
Title
GaN transistors — Giving new life to Moore´s Law
Author
Lidow, Alex
Author_Institution
Efficient Power Conversion Corp., El Segundo, CA, USA
fYear
2015
fDate
10-14 May 2015
Firstpage
1
Lastpage
6
Abstract
Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this paper, we discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore´s Law is alive and well in the world of power semiconductor technology. We begin by enumerating the advantages of GaN over silicon in terms of performance, cost, and reliability.
Keywords
III-V semiconductors; gallium compounds; transistors; wide band gap semiconductors; GaN; GaN transistors; Moore´s Law; aging silicon power MOSFET; enhancement-mode gallium nitride transistors; power semiconductor technology; Gallium nitride; Logic gates; MOSFET; Performance evaluation; Silicon; Thermal resistance; FET; GaN FET; MOSFET; enhancement mode; gallium nitride; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123375
Filename
7123375
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