• DocumentCode
    2811042
  • Title

    GaN transistors — Giving new life to Moore´s Law

  • Author

    Lidow, Alex

  • Author_Institution
    Efficient Power Conversion Corp., El Segundo, CA, USA
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this paper, we discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore´s Law is alive and well in the world of power semiconductor technology. We begin by enumerating the advantages of GaN over silicon in terms of performance, cost, and reliability.
  • Keywords
    III-V semiconductors; gallium compounds; transistors; wide band gap semiconductors; GaN; GaN transistors; Moore´s Law; aging silicon power MOSFET; enhancement-mode gallium nitride transistors; power semiconductor technology; Gallium nitride; Logic gates; MOSFET; Performance evaluation; Silicon; Thermal resistance; FET; GaN FET; MOSFET; enhancement mode; gallium nitride; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
  • Conference_Location
    Hong Kong
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-6259-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.2015.7123375
  • Filename
    7123375