Title :
On modeling faults in FinFET logic circuits
Author :
Yuxi Liu ; Qiang Xu
Author_Institution :
Dept. of Comput. Sci. & Eng., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
FinFET transistor has much better short-channel characteristics than traditional planar CMOS transistor and will be widely used in next generation technology. Due to its significant structural difference from conventional planar devices, it is essential to revisit whether existing fault models are applicable to detect faults in FinFET logic gates. In this paper, we study some unique defects in FinFET logic circuits and simulate their faulty behavior. Our simulation study shows that most of the defects can be covered with existing fault models, but they vary under different cases and test strategies may need to be augmented to target them.
Keywords :
CMOS logic circuits; MOSFET; MOSFET circuits; fault diagnosis; logic gates; FinFET logic circuit; FinFET logic gates; FinFET transistor; fault detection; fault modeling; faulty behavior; next generation technology; planar CMOS transistor; planar device; short channel characteristics; Circuit faults; Delay; FinFETs; Integrated circuit modeling; Layout; Logic gates;
Conference_Titel :
Test Conference (ITC), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-1594-4
DOI :
10.1109/TEST.2012.6401565