DocumentCode :
2811630
Title :
An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)
Author :
Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan ; Stiasny, Thomas ; Lophitis, Neophytos ; Udrea, Florin
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Baden-Dättwil, Switzerland
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
109
Lastpage :
112
Abstract :
In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT). In a conventional RC-IGCT, the IGCT and diode are integrated into a single wafer but they are fully separated from each other. The novel BGCT on the other hand features an interdigitated integration of diode- and GCT-areas. This interdigitated integration results in an improved diode as well as GCT area, better thermal distribution, soft turn-off/reverse recovery and lower leakage current compared to conventional RC-IGCTs. We have discussed the advantages of a new diode anode design in BGCT, which is shallower than that of the conventional RC-IGCT. We have successfully demonstrated the BGCT concept with 38 mm, 4.5 kV prototypes and compared the on-state, turn-off and blocking characteristics with conventional RC-IGCTs both in GCT- and diode-modes of operation.
Keywords :
leakage currents; semiconductor diodes; thyristors; BGCT; RC-IGCT; bimode gate commutated thyristor; diode anode; leakage current; reverse conducting-integrated gate commutated thyristor; soft turn-off-reverse recovery; thermal distribution; voltage 4.5 kV; Anodes; Cathodes; Leakage currents; Logic gates; Semiconductor diodes; Silicon; Thyristors; BGCT; Bi-mode GCT; High power semiconductor switch; IGCT; Reverse Conducting IGCT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
ISSN :
1943-653X
Print_ISBN :
978-1-4799-6259-4
Type :
conf
DOI :
10.1109/ISPSD.2015.7123401
Filename :
7123401
Link To Document :
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