Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT

Author

Tanaka, Masahiro ; Nakagawa, Akio

Author_Institution

Nihon Synopsys G.K., Tokyo, Japan

fYear

2015

fDate

10-14 May 2015

Firstpage

121

Lastpage

124

Abstract

In this paper, new theory of device failure for MOSFET-Mode IGBTs is presented, for the first time, based on large scale 3D & 2D TCAD simulations. It was found that current filaments appear when the impact ionization in the anode side exceeds a critical avalanche generation rate. The current filamentation occurs because there exist two solutions: state of current filaments and state of uniform current flow beyond the critical avalanche generation rate. Below the critical avalanche rate, there is no state of current filaments, and the device is safe. The calculated results successfully explain the previous experimental results of device failure.

Keywords

MOSFET; insulated gate bipolar transistors; short-circuit currents; technology CAD (electronics); MOSFET-mode IGBT; TCAD simulations; avalanche induced short-circuit current crowding; critical avalanche generation rate; current filamentation; state of current filaments; state of uniform current flow; Anodes; Current density; Electric fields; Insulated gate bipolar transistors; Integrated circuit modeling; Lattices; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123404

Filename

7123404