Title :
Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT
Author :
Tanaka, Masahiro ; Nakagawa, Akio
Author_Institution :
Nihon Synopsys G.K., Tokyo, Japan
Abstract :
In this paper, new theory of device failure for MOSFET-Mode IGBTs is presented, for the first time, based on large scale 3D & 2D TCAD simulations. It was found that current filaments appear when the impact ionization in the anode side exceeds a critical avalanche generation rate. The current filamentation occurs because there exist two solutions: state of current filaments and state of uniform current flow beyond the critical avalanche generation rate. Below the critical avalanche rate, there is no state of current filaments, and the device is safe. The calculated results successfully explain the previous experimental results of device failure.
Keywords :
MOSFET; insulated gate bipolar transistors; short-circuit currents; technology CAD (electronics); MOSFET-mode IGBT; TCAD simulations; avalanche induced short-circuit current crowding; critical avalanche generation rate; current filamentation; state of current filaments; state of uniform current flow; Anodes; Current density; Electric fields; Insulated gate bipolar transistors; Integrated circuit modeling; Lattices; Three-dimensional displays;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123404
