Title :
Temperature evolution in power semiconductor devices: measurement techniques and simulation
Author :
Perret, R. ; Schaeffer, Ch ; Farjah, E.
Author_Institution :
Lab. d´´Electrotech., Inst. Nat. Polytech. de Grenoble, Saint Martin d´´Heres, France
Abstract :
Thermal properties and temperature dependency of semiconductor parameters are well-known phenomena. For power electronic components knowledge of temperature evolution can lead to a better utilization of the component. In this paper different direct and indirect experimental temperature and power loss measurements are discussed. Besides, different component thermal models based on the finite element method are developed and the results of these experimental measurements and simulations applied to power IGBTs are presented and compared
Keywords :
finite element analysis; insulated gate bipolar transistors; loss measurement; power measurement; power transistors; temperature measurement; component thermal models; finite element method; measurement techniques; power IGBTs; power loss measurements; power semiconductor devices; semiconductor parameters; temperature dependency;
Conference_Titel :
Measurement Techniques for Power Electronics, IEE Colloquium on
Conference_Location :
Birmingham
