Tools for HV semiconductor measurement

Discusses characterisation of new power semiconductor devices prior to their adoption by product groups, and the resolution of problems of device-circuit interaction encountered in their practical application. High power thyristors of up to 5.2 kV, 3 kA, gate turn off thyristors (GTOs) up to 4.5 kV, 4 kA and insulated gate bipolar transistors (IGBTs) up to 1.2 kV, 400 A have been operated at frequencies between 20 Hz and 10 kHz, to the limits of power of the test circuits employed. A considerable experience has been accumulated in the development of gate drives and snubbing circuitry. Failure modes in devices can also be investigated allowing `post mortems´ to be carried out