A Novel Thermal Spectrum Analysis Method for Reliability Analysis of Semiconductor Devices

As a new concept and method, thermal spectrum analysis, is introduced to characterize non-uniform property of junction temperature distribution in this paper. Unlike common infrared image, the proposed thermal spectrum analysis aims at the active region of power devices and provides a quantificational analysis method to effectively investigate thermotics reliability. Both the thermal spectrum curves and the one-dimension temperature distribution curves are given via quantitative and qualitative analysis base on infrared images. The one-dimension temperature distribution curve brings the high readability and convenience for characterizing uniform property and calculating non-uniform degree. The junction temperature distribution of the active region of power devices, peak junction temperature and minimum junction temperature are given in the proposed method. The average junction temperature is calculated through the one-dimension temperature distribution curves. The proposed thermal spectrum analysis, as a new concept, has inducted a novel approach of analyzing temperature distribution of devices. Moreover, the thermal spectrum proposed in this paper will induct a new approach of detecting temperature distribution via complete electrical method, and will create significant impact for the reliability analysis of semiconductor devices.