A vertical current regulator diode with trench cathode based on double epitaxial layers for LED lighting

Author

Yitao He ; Ming Qiao ; Gang Dai ; Liangliang Yu ; Kang Zhang ; Xin Zhao ; Jianfeng Ou ; Xuqiang Zhu ; Zhaoji Li ; Yunyang Tang ; Bo Zhang

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2015

fDate

10-14 May 2015

Firstpage

157

Lastpage

160

Abstract

A vertical current regulator diode (CRD) with trench cathode based on double epitaxial layers is proposed and experimentally demonstrated. Double epitaxial layers structure is induced not only to achieve high breakdown voltage (V_B) but also to improve the saturation characteristics. Long-channel is realized by implanting boron after trench etching, which further improves the IV characteristics. Experimental results show that the proposed CRD presents well IV characteristics and a high V_B above 200 V. What´s more, the CRDs of different regulating current levels are achieved in the smallest device size of 470 × 470 μm² among all the reported CRDs with the same application voltage for LED lighting.

Keywords

cathodes; etching; light emitting diodes; lighting; semiconductor diodes; semiconductor epitaxial layers; CRD; LED Lighting; breakdown voltage; double epitaxial layer; implanting boron; trench cathode; trench etching; vertical current regulator diode; Boron; Epitaxial layers; JFETs; Light emitting diodes; Lighting; Regulators; Temperature; LED lighting; analytical model; double epitaxial layers; trench cathode; vertical current regulator diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123413

Filename

7123413