The boost transistor: A field plate controlled LDMOST

Author

Ferrara, A. ; Heringa, A. ; Boksteen, B.K. ; Claes, J. ; van der Wel, A. ; Schmitz, J. ; Hueting, R.J.E. ; Steeneken, P.G.

Author_Institution

MESA+Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2015

fDate

10-14 May 2015

Firstpage

165

Lastpage

168

Abstract

In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance R_onA. By applying a positive voltage V_boost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance R_onA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

Keywords

MOSFET; driver circuits; electric breakdown; LDMOS transistor; TCAD simulations; accumulation layer; boost transistor; breakdown voltage; drain extension; driving circuit; field plate controlled LDMOST; separate field plate boost electrode; single gate device; Electric potential; Electrodes; Impact ionization; Logic gates; Resistance; Transistors; Voltage measurement; Power MOSFET; RESURF; Silicon-on-insulator (SOI); field plate;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123415

Filename

7123415