Title :
The boost transistor: A field plate controlled LDMOST
Author :
Ferrara, A. ; Heringa, A. ; Boksteen, B.K. ; Claes, J. ; van der Wel, A. ; Schmitz, J. ; Hueting, R.J.E. ; Steeneken, P.G.
Author_Institution :
MESA+Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.
Keywords :
MOSFET; driver circuits; electric breakdown; LDMOS transistor; TCAD simulations; accumulation layer; boost transistor; breakdown voltage; drain extension; driving circuit; field plate controlled LDMOST; separate field plate boost electrode; single gate device; Electric potential; Electrodes; Impact ionization; Logic gates; Resistance; Transistors; Voltage measurement; Power MOSFET; RESURF; Silicon-on-insulator (SOI); field plate;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123415
