Title :
The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs
Author :
Camuso, G. ; Udrea, F. ; Udugampola, N. ; Pathirana, V. ; Trajkovic, T.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
We report here a new physical phenomenon related to contact etch depth in High Voltage Lateral IGBTs (LIGBTs) and propose a design technique to increase yield of LIGBTs in high volume production. We prove for the first time that the contact geometry and placement have direct effect on Collector injection efficiency in LIGBTs. An improved design for 800V LIGBTs obtained by optimising the layout of contact openings is proposed. The new structure resulted in 15% increase in production yield.
Keywords :
insulated gate bipolar transistors; power integrated circuits; LIGBT; collector injection efficiency; contact etch depth; contact geometry; contact opening layout; high voltage lateral IGBT; high volume production; power IC; Contacts; Insulated gate bipolar transistors; Layout; Performance evaluation; Production; Silicon; Temperature measurement; Collector Contact; Injection efficiency; Lateral IGBT; Uniformity; Yield;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123419
