DocumentCode :
2811991
Title :
Parametric degradation in transistors
Author :
Feinberg, Alec ; Ersland, Peter ; Widom, Allan ; Kaper, Val
Author_Institution :
M/A-COM, Lowell, MA, USA
fYear :
2005
fDate :
Jan. 24-27, 2005
Firstpage :
266
Lastpage :
270
Keywords :
Schottky gate field effect transistors; failure analysis; heterojunction bipolar transistors; leakage currents; life testing; semiconductor device reliability; FET; HBT; bipolar transistor; device reliability; drain-source resistance; failure analysis; field-effect transistor; heterojunction bipolar transistor; leakage current; life test data; metal-semiconductor FET; parametric transistor degradation; transconductance; transistor reliability; Aging; Degradation; FETs; Heterojunction bipolar transistors; Kinetic theory; Leakage current; Life testing; MESFETs; Temperature dependence; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability and Maintainability Symposium, 2005. Proceedings. Annual
ISSN :
0149-144X
Print_ISBN :
0-7803-8824-0
Type :
conf
DOI :
10.1109/RAMS.2005.1408373
Filename :
1408373
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2811991
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