DocumentCode
2811991
Title
Parametric degradation in transistors
Author
Feinberg, Alec ; Ersland, Peter ; Widom, Allan ; Kaper, Val
Author_Institution
M/A-COM, Lowell, MA, USA
fYear
2005
fDate
Jan. 24-27, 2005
Firstpage
266
Lastpage
270
Keywords
Schottky gate field effect transistors; failure analysis; heterojunction bipolar transistors; leakage currents; life testing; semiconductor device reliability; FET; HBT; bipolar transistor; device reliability; drain-source resistance; failure analysis; field-effect transistor; heterojunction bipolar transistor; leakage current; life test data; metal-semiconductor FET; parametric transistor degradation; transconductance; transistor reliability; Aging; Degradation; FETs; Heterojunction bipolar transistors; Kinetic theory; Leakage current; Life testing; MESFETs; Temperature dependence; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability and Maintainability Symposium, 2005. Proceedings. Annual
ISSN
0149-144X
Print_ISBN
0-7803-8824-0
Type
conf
DOI
10.1109/RAMS.2005.1408373
Filename
1408373
Link To Document