Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process

Author

Chi-Chen Chang ; Yen-Chung Chiang

Author_Institution

Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

fYear

2012

fDate

21-23 Nov. 2012

Firstpage

16

Lastpage

18

Abstract

In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15μm pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P_1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.

Keywords

HEMT circuits; gallium arsenide; low noise amplifiers; network topology; CS-CG cascoded topologies; GaAs; LNA; V-band applications; common source-common gate cascoded topologies; gain 12.1 dB; low noise amplifier; noise figure; noise figure 5.456 dB; pHEMT process; size 0.15 mum; Gain; Gain measurement; Gallium arsenide; Impedance matching; Noise measurement; PHEMTs; Transmission line measurements; GaAs pHEMT process technology; V band; low noise amplifier; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4673-2303-1

Type

conf

DOI

10.1109/RFIT.2012.6401599

Filename

6401599