Title :
Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs
Author :
Renn, S.H. ; Raynaud, C. ; Pelloie, J.L. ; Balestra, F.
Author_Institution :
CNRS, Grenoble, France
fDate :
March 31 1998-April 2 1998
Abstract :
A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.
Keywords :
MOSFET; SIMOX; ageing; hot carriers; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; wafer bonding; N-channel SOI MOSFETs; N-channel transistors; P-channel SOI MOSFETs; P-channel transistors; SIMOX MOSFETs; SOI MOSFETs; SOI technology; Si-SiO/sub 2/; Unibond MOSFETs; aging mechanism; fully-depleted SOI MOSFETs; hot-carrier degradation; hot-carrier effects; hot-carrier immunity; partially-depleted SOI MOSFETs; recovery mechanism; reliability; Degradation; Hot carrier effects; Hot carriers; Low voltage; MOS devices; MOSFETs; Stress; Threshold voltage; Ultra large scale integration; Wafer bonding;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670545
