DocumentCode :
2812091
Title :
Design of a low power 60GHz OOK receiver in 65nm CMOS technology
Author :
Zhenghao Lu ; Chen Feng ; Xiaopeng Yu ; Yajie Qin ; Kiat Seng Yeo
Author_Institution :
Soochow Univ., Suzhou, China
fYear :
2012
fDate :
21-23 Nov. 2012
Firstpage :
22
Lastpage :
24
Abstract :
This paper presents the design of a low-power millimeter wave receiver for Gbps short range wireless communications in the 60GHz frequency range. The scope of this paper covers the system design of the OOK direct conversion receiver, the design of a novel 60GHz low-noise amplifier, the co-design of the mixer with the IF amplifier and the design of a IF variable gain amplifier. The full receiver is realized in Global Foundry 65nm CMOS technology. The extracted simulation results show that the receiver is able to work from 50GHz-70GHz with a data rate higher than 1Gbps while consuming a current of about 25mA from a standard 1.2V supply voltage at maximum gain.
Keywords :
CMOS analogue integrated circuits; intermediate-frequency amplifiers; low noise amplifiers; low-power electronics; millimetre wave receivers; mixers (circuits); CMOS technology; Gbps short range wireless communication; IF variable gain amplifier; OOK direct conversion receiver; frequency 50 GHz to 70 GHz; frequency 60 GHz; low power OOK receiver; low-noise amplifier; low-power millimeter wave receiver; mixer; size 65 nm; voltage 1.2 V; CMOS integrated circuits; Millimeter wave transistors; Mixers; Power demand; Receivers; Wireless communication; 60GHz; millimeter wave; receiver; self-demodulating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
Type :
conf
DOI :
10.1109/RFIT.2012.6401601
Filename :
6401601
Link To Document :
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