Title :
Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†
Author :
Duong, T.H. ; Ortiz, J.M. ; Berning, D.W. ; Hefner, A.R. ; Ryu, S.-H. ; Palmour, J.W.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (tfailure) and simulated device internal junction temperature (Tj) at failure for different gate voltages (VGS) and drain voltages (VDS).
Keywords :
electronic engineering computing; elemental semiconductors; physics computing; power MOSFET; power engineering computing; short-circuit currents; 4H-silicon carbide power MOSFET short-circuit SOA; 4H-silicon carbide power MOSFET short-circuit safe-operating-area; current 31.6 A; current 42 A; device design; device internal junction temperature; drain voltages; dynamic electrothermal simulation; gate voltages; model parameter extraction; physics-based electrothermal Saber model; power semiconductor devices; voltage 1200 V; Current measurement; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Temperature measurement; Time measurement; Voltage measurement; MOSFET; SOA; electro-thermal simulation; model validation; short-circuit; silicon carbide;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123428
