Title :
A low-noise high-gain transimpedance amplifier with high dynamic range in 0.13ìm CMOS
Author :
Guoyi Yu ; Xuecheng Zou ; Le Zhang ; Qiming Zou ; Meijun Zheng ; Jianfu Zhong
Author_Institution :
Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
This paper designed a low-noise high-gain tran simpedance amplifier with high dynamic range. The input stage of TIA uses an individual power supply to accommodate the level of the photodiode(PD). Then the signal is transmitted to the subsequent circuit by a level shifting circuit. The TIA adopts DCrestore to stabilize work points, and uses a MOS working in the linear region to reduce the effective input signal to realize high dynamic range. Key noise components are optimized to reduce the input referred current noise. This TIA was validated in 0.13 urn CMOS. The simulation results show the -3dB bandwidth is 1.8GHz, the maximum gain is 82.27dB Ω, the input referred noise is 125nA, and the measure current ranges 5uA ~2mA.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; operational amplifiers; photodiodes; DCrestore; PD level; TIA; current 5 muA to 2 mA; dynamic range; frequency 1.8 GHz; input referred current noise; level shifting circuit; linear region; low-noise high-gain transimpedance amplifier; noise component; photodiode level; power supply; size 0.13 mum; Decision support systems; Mercury (metals); Radio frequency; Complementary metal - oxide -semiconductor(CMOS); dynamic range; high-gain; low-noise; tran simpedance amplifier(TIA);
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401606
