Title :
A SiGe BiCMOS high voltage driver for Class-S power amplifier
Author :
Bonghyuk Park ; Seunghyun Jang ; Jaeho Jung
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; delta-sigma modulation; driver circuits; power amplifiers; semiconductor materials; BiCMOS high voltage driver; SiGe; bit rate 2.4 Gbit/s; class-S power amplifier; fabricated delta-sigma modulator module; high voltage swing; power 202 mW; switching power amplifier; voltage 600 mV; voltage 780 mV; Decision support systems; Hafnium; Radio frequency; BiCMOS; Class-S; high voltage driver; switching power amplifier;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401607
