A SiGe BiCMOS high voltage driver for Class-S power amplifier

Author

Bonghyuk Park ; Seunghyun Jang ; Jaeho Jung

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2012

fDate

21-23 Nov. 2012

Firstpage

41

Lastpage

43

Abstract

A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; delta-sigma modulation; driver circuits; power amplifiers; semiconductor materials; BiCMOS high voltage driver; SiGe; bit rate 2.4 Gbit/s; class-S power amplifier; fabricated delta-sigma modulator module; high voltage swing; power 202 mW; switching power amplifier; voltage 600 mV; voltage 780 mV; Decision support systems; Hafnium; Radio frequency; BiCMOS; Class-S; high voltage driver; switching power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4673-2303-1

Type

conf

DOI

10.1109/RFIT.2012.6401607

Filename

6401607