Title :
CMOS wide band Low Noise Amplifier with current reuse and noise cancellation
Author :
Bindu, P. ; Subramaniam, P.C.
Author_Institution :
Dept. of Electron. & Commn.Eng., Govt. Eng. Coll., Palakkad, India
Abstract :
A wide band Low Noise Amplifier (LNA) in 0.18 μm CMOS technology, employing noise cancellation and current reuse, which receives different wireless standards over a frequency range of 900 MHz to 6 GHz, is designed, analyzed and simulated. The LNA provides a power gain of 17.5 dB with a power dissipation of 13.7 mW, and a noise figure (NF) of 2.6 to 3.5 dB over a bandwidth of 0.9 GHz to 6 GHz.
Keywords :
CMOS analogue integrated circuits; interference suppression; low noise amplifiers; microwave amplifiers; microwave integrated circuits; CMOS wideband low noise amplifier; LNA; bandwidth 0.9 GHz to 6 GHz; current reuse; frequency 900 MHz to 6 GHz; gain 17.5 dB; noise cancellation; noise figure 2.6 dB to 3.5 dB; power 13.7 mW; size 0.18 mum; CMOS integrated circuits; CMOS technology; Gain; Noise; Semiconductor device modeling; LNA; current reuse; noise cancellation;
Conference_Titel :
Communications and Signal Processing (ICCSP), 2011 International Conference on
Conference_Location :
Calicut
Print_ISBN :
978-1-4244-9798-0
DOI :
10.1109/ICCSP.2011.5739401
