DocumentCode :
2812332
Title :
45 GHz low power static frequency divider in 90 nm CMOS
Author :
Ali, Mohammed K. ; Hamidian, Amin ; Ran Shu ; Malignaggi, Andrea ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
fYear :
2012
fDate :
21-23 Nov. 2012
Firstpage :
65
Lastpage :
67
Abstract :
This work presents the design of a Q-band static frequency divider with quadrature signal output suitable for 60 GHz application. The RF performance improvement and power consumption reduction is achieved by using inductive peaking, resistor splitting techniques as well as proper transistor sizing. The static frequency divider is realized in a 90 nm CMOS technology with a chip area of 0.60×0.75 mm2. The self-oscillation frequency is 20.5 GHz with 12 GHz locking range. -16 dBm output power with less than -1 dBm input sensitivity were measured. The static frequency divider core and the output buffers consume 6.9 mW and 1.2 mW respectively from a 1.2 V power supply.
Keywords :
CMOS integrated circuits; frequency dividers; low-power electronics; power consumption; resistors; transistors; CMOS technology; Q-band static frequency divider; frequency 45 GHz; frequency 60 GHz; inductive peaking; low power static frequency divider; power consumption reduction; proper transistor sizing; quadrature signal output; resistor splitting techniques; size 90 nm; CMOS integrated circuits; Clocks; Frequency conversion; Inductors; Latches; Resistors; Transistors; Inductive peaking; Q-Band; Splitting resistor; Static Frequency Divider;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
Type :
conf
DOI :
10.1109/RFIT.2012.6401615
Filename :
6401615
Link To Document :
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