A monolithic SiC drive circuit for SiC Power BJTs

Author

Kargarrazi, Saleh ; Lanni, Luigia ; Rusu, Ana ; Zetterling, Carl-Mikael

Author_Institution

Integrated Devices & Circuits, KTH (R. Inst. of Technol.), Kista, Sweden

fYear

2015

fDate

10-14 May 2015

Firstpage

285

Lastpage

288

Abstract

Silicon Carbide (SiC) is an excellent candidate for high temperature electronics applications, thanks to its wide bandgap. SiC power BJTs are commercially available nowadays, and it is demanding to drive them efficiently. This paper reports on the design, layout specifics, and measurements results of a SiC drive integrated circuit (IC) designed for driving SiC power BJTs. The circuit has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz, and together with a commercial power BJT. The SiC drive IC is shown to have a robust operation over the entire temperature range from 25 °C to 500 °C.

Keywords

bipolar transistors; driver circuits; silicon compounds; SiC; capacitive conditions; frequency 500 kHz; integrated circuit; monolithic silicon carbide drive circuit; resistive conditions; silicon carbide power BJT; temperature 25 C to 500 C; Integrated circuits; Power measurement; Resistors; Silicon carbide; Switches; Temperature distribution; Temperature measurement; Driving Power BJTs; Integrated circuits (ICs); Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123445

Filename

7123445