Title :
Methods for virtual junction temperature measurement respecting internal semiconductor processes
Author :
Herold, Christian ; Franke, Jorg ; Bhojani, Riteshkumar ; Schleicher, Andre ; Lutz, Josef
Author_Institution :
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
Abstract :
This paper discusses the limitation in measurement accuracy of junction temperature measurements of bipolar devices. A limiting factor the measurement delay, caused by slow removal of charge carriers, was investigated by single pulse measurements and evaluated by simulations. A minimal measurement delay of 650μs was found for a 6.5 kV IGBT at high temperature.
Keywords :
insulated gate bipolar transistors; semiconductor device measurement; temperature measurement; IGBT; bipolar devices; charge carrier removal; internal semiconductor processes; limiting factor; measurement delay; single pulse measurements; time 650 mus; virtual junction temperature measurement method; voltage 6.5 kV; Current measurement; Delays; Insulated gate bipolar transistors; Semiconductor device measurement; Switches; Temperature measurement; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123455
