DocumentCode
2812741
Title
Noise Analysis for UltraWideBand Low Noise Amplifiers
Author
Zargham, Meysam ; Gaudet, Vincent
Author_Institution
Univ. of Alberta, Edmonton
fYear
2007
fDate
22-26 April 2007
Firstpage
1102
Lastpage
1105
Abstract
Noise performance is the most important property of any low noise amplifier. Different conventional cascode ultrawideband 3.1-10.6 GHz low noise amplifier (LNA) topologies have been studied and compared in terms of noise figure (NF). The effect of an inductive inner stage on noise has been discussed. A novel two by two linear correlated matrix has been assumed for deriving correlation impedances of the Noise Figure. All simulations are based on a typical 0.18-mum CMOS process.
Keywords
CMOS integrated circuits; MMIC amplifiers; integrated circuit noise; low noise amplifiers; matrix algebra; ultra wideband communication; CMOS process; LNA topologies; correlation impedances; frequency 3.1 GHz to 10.6 GHz; inductive inner stage; linear correlated matrix; noise analysis; size 0.18 mum; ultrawideband low noise amplifiers; 1f noise; Circuit noise; Frequency; Low-noise amplifiers; MOS devices; Noise cancellation; Noise figure; Topology; Ultra wideband technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on
Conference_Location
Vancouver, BC
ISSN
0840-7789
Print_ISBN
1-4244-1020-7
Electronic_ISBN
0840-7789
Type
conf
DOI
10.1109/CCECE.2007.281
Filename
4232940
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