DocumentCode
2812752
Title
Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates
Author
Chowdhury, S. ; Hitchcock, C. ; Dahal, R. ; Bhat, I.B. ; Chow, T.P.
Author_Institution
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2015
fDate
10-14 May 2015
Firstpage
353
Lastpage
356
Abstract
This paper presents static and dynamic electrical characteristics of implanted 4H-SiC PiN diodes fabricated on Si-face and C-face of lightly doped free-standing substrates. The device performance is found to be comparable to conventional diodes. Carrier lifetime of about 2.5 μs was measured for the drift region.
Keywords
carrier lifetime; p-i-n diodes; semiconductor doping; silicon compounds; wide band gap semiconductors; P-i-N diodes; SiC; carrier lifetime; drift region; lightly doped free-standing substrates; Charge carrier lifetime; Frequency selective surfaces; P-i-n diodes; PIN photodiodes; Substrates; Temperature measurement; Voltage measurement; P-i-n diodes; Silicon Carbide (4H-SiC); freestanding substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123462
Filename
7123462
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