Title :
Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates
Author :
Chowdhury, S. ; Hitchcock, C. ; Dahal, R. ; Bhat, I.B. ; Chow, T.P.
Author_Institution :
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper presents static and dynamic electrical characteristics of implanted 4H-SiC PiN diodes fabricated on Si-face and C-face of lightly doped free-standing substrates. The device performance is found to be comparable to conventional diodes. Carrier lifetime of about 2.5 μs was measured for the drift region.
Keywords :
carrier lifetime; p-i-n diodes; semiconductor doping; silicon compounds; wide band gap semiconductors; P-i-N diodes; SiC; carrier lifetime; drift region; lightly doped free-standing substrates; Charge carrier lifetime; Frequency selective surfaces; P-i-n diodes; PIN photodiodes; Substrates; Temperature measurement; Voltage measurement; P-i-n diodes; Silicon Carbide (4H-SiC); freestanding substrate;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123462
