Title :
GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform
Author :
Nakajima, Akira ; Nishizawa, Shin-ichi ; Ohashi, Hiromichi ; Kayanuma, Rei ; Tsutsui, Kazuo ; Kubota, Shunsuke ; Kakushima, Kuniyuki ; Wakabayashi, Hitoshi ; Iwai, Hiroshi
Author_Institution :
Energy Technol. Res. Inst., AIST, Tsukuba, Japan
Abstract :
Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
Keywords :
gallium compounds; monolithic integrated circuits; polarisation; 2D electron gas; 2DEG resistances; 2DHG resistances; GaN; Schottky diodes; high-density 2D hole gas; monolithic operations; monolithic power integrated circuit technology; negative polarization; polarization-junction platform; positive polarization; sheet resistance measurements; temperature 6 K to 640 K; wide operating temperature; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature; Temperature measurement; Two dimensional hole gas; GaN; N-channel component; P-channel; polarization junction; power IC;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123463