Title :
Suppression of switching loss dependence on charge imbalance of superjunction MOSFET
Author :
Yamashita, Hiroaki ; Ura, Hideyuki ; Ono, Syotaro ; Nashiki, Masato ; Mii, Kenji ; Saito, Wataru ; Onodera, Jun ; Hokomoto, Yoshitaka
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Nomi, Japan
Abstract :
We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.
Keywords :
field effect transistor switches; losses; semiconductor junctions; CIB; MOS gate structure; SJ structure; SJ-MOSFET; charge imbalance; gate plateau voltage; gate threshold voltage; gate voltage transient behavior; resistive load switching behavior; robust MOS gate design; superjunction MOSFET; switching loss; switching loss dependence suppression; Electric potential; Layout; Logic gates; MOSFET; Switches; Switching loss; Transient analysis; superjunction; switching loss;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123475
