Title :
Recent progress in GaN HEMT for high-frequency and high-power applications
Author :
Kanamura, M. ; Ohki, T. ; Kikkawa, Takamaro ; Imanishi, Kenji ; Watanabe, K. ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper, we describe the recent progress in GaN HEMT technology for high-frequency and high-power applications. First, we present the GaN HEMT technology for base-station applications. Then, we discuss the current drift phenomena during RF operation. We also present the device technology for normally off GaN HEMTs.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT technology; RF operation; base-station application; current drift phenomena; device technology; high-frequency application; high-power application; Decision support systems; Radio frequency; GaN HEMT; normally off; power amplifiers; power devices;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401645
