• DocumentCode
    2813190
  • Title

    A 70 and 210 GHz LO generator in 65nm CMOS

  • Author

    Bryant, Carl ; Lindstrand, Jonas ; Sjoland, Henrik ; Tormanen, Markus

  • Author_Institution
    Electr. & Inf. Technol., Lund Univ., Lund, Sweden
  • fYear
    2012
  • fDate
    21-23 Nov. 2012
  • Firstpage
    195
  • Lastpage
    197
  • Abstract
    A CMOS LO-Generator operating at 70GHz and 210GHz by the use of a frequency tripling technique is presented. A cross-coupled NMOS VCO is used together with a single-balanced mixer to achieve low phase-noise. The chip measures a single-ended output power of -15dBm in the 70GHz band, with 6.54% tuning range, from a 1.2V supply while consuming 7.2mW. A phase-noise of -113.2dBc/Hz is measured at 10MHz frequency offset from a carrier frequency of 73.8GHz. This yields a phase noise figure of merit, FOM, of 181.8dB, and with the tuning range taken into account, a FOMT of 178dB. By using this technique neither FOM nor FOMT are degraded in the 210GHz band since both power consumption and tuning range are maintained.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; frequency multipliers; voltage-controlled oscillators; CMOS; cross coupled NMOS VCO; frequency 70 GHz to 210 GHz; frequency tripling technique; local oscillator generator; noise figure 181.8 dB; power 7.2 mW; size 65 nm; voltage 1.2 V; CMOS integrated circuits; Frequency measurement; Mixers; Phase noise; Resonant frequency; Tuning; Voltage-controlled oscillators; CMOS; FOM; MMICs; Submillimeter wave integrated circuits; VCO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-2303-1
  • Type

    conf

  • DOI
    10.1109/RFIT.2012.6401658
  • Filename
    6401658