• DocumentCode
    2813276
  • Title

    New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers

  • Author

    Evans, J.D. ; Simmons, J.G.

  • Author_Institution
    Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    237
  • Lastpage
    238
  • Abstract
    A new relationship describing the threshold current vs. temperature relation of InGaAsP/InP MQW lasers is proposed. The commonly used characteristic temperature, T0, is replaced by a new, temperature insensitive parameter Tmax, which represents the lasers´ maximum operating temperature
  • Keywords
    Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; sensitivity; InGaAsP-InP; InGaAsP/InP MQW lasers; characteristic temperature; long wavelength semiconductor lasers; maximum laser operating temperature; temperature insensitive parameters; temperature relation; temperature sensitivity; threshold current; Charge carrier density; Electrons; Indium phosphide; Laser theory; Quantum well devices; Radiative recombination; Semiconductor lasers; Temperature dependence; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519351
  • Filename
    519351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2813276