• DocumentCode
    2813312
  • Title

    Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs

  • Author

    Albahrani, Sayed A. ; Parker, Anthony E.

  • Author_Institution
    Dept. of Phys. & Eng., Macquarie Univ., Sydney, NSW, Australia
  • fYear
    2010
  • fDate
    28-28 May 2010
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; pulse amplifiers; transients; wide band gap semiconductors; GaN; HEMT; drain-current transient; premeasurement terminal correction; pulse-amplifier slew-rate; pulsed-IV measurement; self-heating dynamics; thermal response; trap dynamics; trap time-constant; trap-potential; FETs; Gallium nitride; HEMTs; MODFETs; Physics; Predictive models; Pulse amplifiers; Pulse measurements; Time measurement; Transfer functions; HEMT; Pulse measurement; pulse amplifier slew rate; self-heating; trap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Measurements Conference (ARFTG), 2010 75th ARFTG
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-4244-6364-0
  • Type

    conf

  • DOI
    10.1109/ARFTG.2010.5496336
  • Filename
    5496336